Deposition of Tantalum Oxide Thin Film by Laser Ablation

"Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition-was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 µm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as ? Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at I273 K for 3 h.IntroductionTransition metal oxides have a potential to show special characteristics in electrical, magnetic and/or optical properties. When such compounds are fabricated in the form of thin film, the special properties would be improved or new characters would appear in comparison with bulk materials. Tantalum penta-oxide is widely used as a capacitor since Ta2O5 shows high dielectric constants up to high temperatures. The tantalum solid capacitor has been fabricated by the electrical oxidation of sintered Ta metal cylinder followed by MnO2 film coating. However, further improvements, reduction and layered structure formation, are required for compacting the devices. The layered structure of thin films would be applicable for the above requirements. The formation ofTa2O5 film by low pressure CVD1), photo CVD2) and magnetron sputtering3l were reported. The laser ablation -method is one of the most convenient techniques for the deposition of thin films from their compounds, such as oxides. Formation of Ta2O5 film by pulse laser deposition (PLD) method using ArF excimer4), Nd:YAG (533nm)5) and TEA CO2 6 lasers was reported. In these PLD studies, ablation was carried out in relatively high oxygen pressures resulting in formation of Ta2O 5 film. In this paper, the deposition of tantalum oxide thin film by the laser ablation of Ta2O 5 using Nd:YAG pulse laser was examined at a viliety oxygen pressures ranging from 10-8 to 10 Torr. The morphology of the films was also investigated in relation with substrate temperature and oxygen pressure."