Effect Of Oxidation On Wetting Behavior Between Silicon And Silicon Carbide

Experimental oxidation tests at high temperature (1000-1200 °C) on SiC samples have been respectively performed under wet and dry air atmosphere for different holding times. The thickness of thermally grown oxide was experimentally measured by DEKTAK Stylus Profilometry. The results showed that the oxidation rate was increased with temperature and holding time, corresponding to a passive oxidation regime which led to the formation of SiO2 layer. The sessile drop method was employed in order to measure the contact angles between Si and SiC at high temperature. Contact angle can be varied from 39.6° to 75.6° by controlling the atmosphere. The deoxidation of the oxide layer and infiltration of liquid silicon caused a decrease in the contact angle.