Electron Field Emission from Nitrogen-Doped Amorphous Carobn Thin Films Prepared by Arc Ion Plating

"Amorphous carbon thin films doped with nitrogen ( a-C:N) have been synthesized by means of shielded arc ion plating (SAIP). Their electron field emission properties, that is, threshold field strengths for electron emission and maximum emission current densities, were evaluated and compared with those of pure amorphous carbon (a-C) films prepared by the same SAIP apparatus. Among all of the fabricated a-C:N films, the a-C:N films with a N concentration of 23 %, which prepared using Nz arc plasm at a pressure of 1 Pa with applying a sample bias voltage of -100 V, showed the lowest threshold filed of 13.4 V/µm and the highest emission current density of 1.87 µAfcm2 at a field of20 V/µm. These field emission properties of the a-C:N film were much better than those of the a-C films. The best results obtained on the a-C film in this study were the lowest threshold filed of 15.5 V/µm and the highest emission current density of 0.052 µA/cm2 at a field of 20 V /µm. Nitrogen doping to aC was found to be effective for lowering threshold voltage for field emission and for increasing emission current density. The electron field emission characteristics of the a-C:N films depended not only on N concentration but also on chemical bonding state of nitrogen in the a-C:N films. The presence of the ~-C3N4-like phase, which contributes to improve wear resistance of a-C:N as well, distinguished by the NlsXPS peak at 400.5 eV is proved to be crucial in order to enhance field emission properties of a-C:N.IntroductionThere has been much interest in electron field emission from a cold cathode due to its potential applications in vacuum microelectronic devices including field emission displays which are expected as flat panel displays in next generation [l]. It is well known that efficient emission can be rather readily realized using tip-like shape cathodes, e.g., microfabricated three-dimensional electrodes [2], carbon nanotubes [3-5], etc. However, electron emission from planar surfaces is of particular importance since such a type of cathode is· simply fabricated and assembled into microelectronic circuits. Currently, amorphous carbon thin films doped with nitrogen (a-C:N) prepared by plasma processes have attracted attention because their threshold voltages of field emission are relatively low [6]. Among various methods for preparing a-C:N films, the process using arc plasma is of special interest since, in arc plasma, nitrogen is highly activated and new types of carbon nitride phase are expected to be synthesized. However, field emission properties of a-C:N prepared by arc plasma have been studied in less detail compared with that prepared by the other methods such as sputtering."