Fugitive Emissions Related to Oxidation of Liquid Silicon during Ladle Refining

"In oxidative ladle refining (OLR) of silicon, the metal surface is oxidized resulting in the formation of a condensed silica fume (SiO2). In the current work, industrial measurement campaigns were performed aiming to measure the fume generation during OLR. A thorough discussion of the possible mechanisms has been included in order to improve our understanding of the Si(1)-O2(g) system.The measurement campaigns were performed at the Elkem Salten plant in Norway. In addition to fume generation from OLR, the metal temperatures and ladle purge gas amount were recorded. The results of this work suggest that fume generation during OLR results from splashing of the metal and/or oxidation of the metal surface, with oxygen transport to the metal surface being the limiting factor. Other mechanisms of SiO2 formation were investigated, however insignificant.IntroductionOne of the main environmental and economical challenges facing the metallurgical industry is fugitive emissions of both materials and energy. In the production of metallurgical grade silicon (MG-Si), refining of the silicon generally takes place through an oxidative ladle treatment (purging with an air-O2 mixture). In the refining process, exposure of silicon to air results in the formation of condensed silica fumes (SiO2) – one of the main sources of fugitive emissions in silicon production plants. The oxidation of liquid silicon, as opposed to solid silicon, has not been widely studied and described in the literature [1], thus a thorough investigation of the oxidation mechanisms, and factors affecting the oxidation reaction rate are essential in order to deal with the problem. In the current work, the rate of liquid silicon oxidation has been studied through industrial measurements of fume generation from refining adles, where the purge gas rate and composition have been varied. The results from these measurements were discussed in light of existing models describing the liquid silicon oxidation kinetics."