Low-Temperature Processing of Ba-Doped Lead Zinc Niobate Powder with Chemical Solution Deposition

"Perovskite-type lead zinc niobate (PZN) exhibits excellent electrical properties such as high dielectric constant, high electrostrictive coefficient and superior piezoelectricity. Therefore, PZN ceramics are very promising for high performance electronic devices. However, perovskite phase PZN is not stable under the ambient atmosphere. Accordingly, it is very difficult to prepare single-phase perovskite PZN ceramics. In this study, A-site cation of lead was partially substituted for barium to stabilize the perovskite phase of the PZN (Ba-doped PZN) powder. In addition, molecular design of an alkoxide precursor was controlled for a low-temperature processing. As a result, molecular design to suppress the lead-volatilization during calcination was preferred for a low-temperature processing. Processing temperature for a single-phase perovskite was depended on the amount of barium dopant. Doping of20 mole% of barium resulted in the single phase perovskite at 900 °C. The temperature for the single phase perovskite of Ba-doped PZN powder, which depended upon the amount of Ba-doping, was lower than that of the powder prepared by the atmosphere controlled conventional powder processing at least by 150 °C.IntroductionFerroelectric thin films and powders with perovskite structure are of renewed interest for micro-electronic applications, including ferroelectric random access memory (FRAM), dynamic random access memory (DRAM), and thin-layer capacitors integrated onto a silicon wafer [1-3]. In addition, recent advancement in micro-machine requires a high performance micro-actuator [4]. A perovskite type relaxor of Pb(Zn113 Nb213)03 is one of the promising materials for a high performance capacitor and microactuator because of their high permittivity and electrostrictive coefficient [5]. Therefore, this paper focuses on the low temperature processing of Ba-doped PZN powders.Chemical solution deposition (CSD) from molecular-designed alkoxide precursor solution is one of the most promising techniques for processing high-performance powders and thin films because it offers precise control of compositions on a molecular scale as well as a low processing temperature [6]. However, chemical solution deposition of perovskite type PZN powders and ceramics are very difficult because of the formation of stable pyrochlore phases. Therefore in the past, PZN powders and single crystal have been prepared by the hydrothermal method or flux method as well as the partial substitution method of a A-site cation [7-10]. In this study, a suitable molecular design for a preparation of perovskite type Ba-doped PZN powders with a chemical solution deposition process is investigated as well as the effect of A-site cation substitution. Chemical solution deposition from molecular-designed alkoxide precursor solution is expected to decrease the amount of a A-site substitution and/or a crystallization temperature for a single phase perovskite. This paper describes ""the relation between molecular-design and processing temperatures for a single-phase perovskite of Ba-doped PZN powders in comparison with the conventional oxides mixing method."