Metallurgical Silicon Refining by Transient Directional Solidification

"Directional solidification is an essential refining step to obtain solar grade silicon from metallurgical silicon. This step can be carried out in a Bridgman furnace, where nearly constant temperature gradients and solidification velocities are imposed on the solid-liquid interface. In the present work, this directional solidification was conducted in a static furnace, in which large temperature gradients and low solidification velocities were enforced to increase macrosegregation. The resulting ingots were analyzed regarding their macrostructures, microstructures and chemical composition. Using measured cooling curves in the ingot as boundary conditions, a mathematical model based on the concept of a stagnant liquid layer at the solid-liquid interface was implemented to predict the macrosegregation profiles. The chemical analyses of the ingots show macrosegregation of several impurities to the ingots top. The mathematical model indicates that liquid convection plays an important role in stabilizing the planar solid-liquid interface, increasing the macrosegregation of impurities.IntroductionMost of silicon used for photovoltaic (PV) energy production is obtained by chemical processes, such as, Siemens and its derivations [1]. However, these chemical processes have drawbacks related to relatively high energy consumption and investment costs, and to safety and environmental problems. In order to overcome these difficulties and to fulfill the silicon demand for PV applications, several metallurgical routes are under development [2] to produce silicon of enough purity to PV applications (SoG-Si) from metallurgical grade silicon (MG-Si).Metallurgical routes involve different steps among which the directional solidification is pointed out as a fundamental one [1]. Directional solidification can cause macrosegregation of impurities to the last part of the ingot to solidify. The impurity segregation during solidification is related to the low solute partition coefficient (k0) between liquid and solid silicon. Most of the impurities in MG-Si have k0 << 1, except for boron, phosphorus and oxygen, which require specific steps of the metallurgical routes to be eliminated. The equilibrium partition coefficient and the solubility limits for the most important impurities in MG-Si are shown in table 1"