MHD Methods for Controlling Hydrodynamics and Heat/Mass Transfer in Processes of Bulk Semiconductor Single Crystal Growth

"This paper presents some results of the investigation of the steady magnetic field influence on hydrodynamics and heat/mass transfer in processes of semiconductor single crystal growth (Si, Ge, InSn). The investigation employed mathematical and physical simulation techniques of relevant processes and full-scale experiments on growth facilities. A number of additional MHD phenomena have been found generated in the melt due to the rearrangement of flow pattern, the formation of specific convective cells, and the origin of MHD boundary and shift layer.IntroductionMagnetohydrodynamic (MHD) means of creating forces by contact-free methods in liquid conducting media have been widely used in the production of volume semiconducting single crystals. The goal of this method is to control convective transfer processes in the melt volume and on the crystallization front [1-3]. This is due to the sufficiently high conductivity of semiconductor melts (s = 104 /106 O1m-1 ) and an obvious relationship between the hydrodynamics in the melt and at interfaces and the conditions of formation of single crystals and their quality [ 1].All types of MHD effects rest upon the generation of volume electromagnetic forces in the melt by various means as well as on the possibility to direct them arbitrary in space and to adjust easily their absolute values. Fig. l presents different means how to implement MHD phenomena during single crystal growth. It should be emphasized that in all the modifications given in Fig. l additional energy introduced into the melt cannot influence directly the crystallization process since it is incomparable to the energy of molecular forces. Both the influence and efficiency of MHD means are determined solely by the change of motion, heat and mass transfer characteristics."