Molecular Beam Epitaxial Growth and Doping Of InSb Using SnTe Source

"InSb being the lowest band gap. material amongst the 111-V semiconductors with low effective mass has long attracted research interest, due to its potential application in far infrared devices and for high speed circuit elements. In this paper, we report, for the first time, Te-doping of InSb on GaAs substrate using SnTe doping source with molecular beam epitaxy (MBE) technique and its electrical characterization. The undoped epilayers are n-type in the temperature range of 10 K to 300 K investigated. The room temperature (RT) mobility as high as 64,810 cm2/V·s (1.9x1016 cm-3) have been measured on a 4.8 µm thick epilayer. Sn Te doping at different doping levels were investigated. 5. 7 µm thick doped layers with RT carrier concentrations ranging from 2x1016 cm-3 to 3.2x1018 cm-3 with corresponding full width at half maximum (FWHM) of x-ray (400) rocking curve varying from 170-200 arc-seconds have been achieved. The Hall mobility of 20,000 cm2/V·s at 1.3xl018 cm-3 carrier concentration was obtained indicating that SnTe is a good candidate as source material for n-type doping of InSb.IntroductionThe thin films of InSb and InSb-based alloys have found considerable interest because of potential applications in III-V semiconductor-based infrared optoelectronic devices1• In addition, the advantage of the small effective mass and the consequent high mobility can be utilized in high frequency and high-speed circuit devices2 InSb can also be used in magnetoresistive sensors for position sensing3. Epitaxial InSb films grown by MBE may be doped n-type with Si or Sn, or with the group VI elements, namely, S, Se, or Te. Of the group VI elements, Te may be advantageous because of its relatively low vapor pressure. However, the vapor pressure is high enough to have sufficient memory effect during MBE growth. Hence different telluride compounds such as GaTe45, PbTe6 and Sb2Te37 have been used as the dopant source for Sb-based compounds. SnTe has also been used as a successful n-type dopant in the MBE growth ofGaSb8 But, to our knowledge, there is no report on the investigation of SnTe doping of InSb. In this paper, we report the first doping characteristics of SnTe in InSb layers grown on GaAs substrate."