Photoluminescence of the Interface of SnO2:F/CdS : In/CdTe Thin Film Solar Cells Prepared Partially by The Spray Pyrolysis Technique

"CdS/CdTe solar cells were built by depositing a 200 nm layer of Sn02:F on glass substrates by the spray pyrolysis (SP) technique, a 500 nm CdS:In layer by the same technique and a 1-1.5 µm CdTe layer by vacuum evaporation. The cells were CdCh heat-treated in nitrogen atmosphere for 30 minutes at 350 -.C. The photoluminescence (PL) spectra were measured at the CdS/CdTe interface for two cells with different values of the CdTe layer's thickness at temperature T = 60 K. A deconvolution peak fit was performed from which it is found that the peaks are characteristic of the solid solution CdSxTei-x· The parabolic relation that relates the bandgap energy with the composition was used to estimate x, where xis [S]/([Te]+[S]) and [Te], [S] are the concentrations of Te and S atoms respectively. The results show that the interface is smooth and the change of the bandgap occurs gradually.IntroductionCdS/CdTe heterojunctions represent a combination of materials promising various applications, and for solar energy conversion in the first place [1]. In photovoltaic cells the CdS material acts as a wide bandgap window. Direct bandgap CdTe with high optical absorption coefficient is used as an absorber [1]. Solar cells with efficiencies of 10 to 16% have been obtained with CdTe grown by close space sublimation, electrodeposition, vacuum evaporation and rf sputtering methods [2]. In this work the CdTe layer was prepared by vacuum evaporation because it results with films of minimum impurities, while the Sn02:F and CdS:In layers were deposited by the spray pyrolysis technique because it is a low cost method which enables intentional doping and large area thin films."