Surface Reactions in Low-Temperature Plasma Deposition of Silicon-Oxide Films

"Infrared reflection absorption measurement was performed during plasma-enhanced chemical vapor deposition of silicon dioxide films at room temperature. Hydrocarbon contaminants adsorbed onto growing film surface are oxidized by oxygen radicals in plasma resulting functional groups which include C=O and C-O bondings. These groups exist only near the surface and are hydrolyzed rapidly after exposure to air.IntroductionRecently low-temperature silicon dioxide (SiO2) deposition has been in a growing industrial demand in pa1ticular, polymelic substrates such as polycarbonate and polyethylene telephthalate, which have poor heat resistance, need low process temperature (near room temperature) in coating of SiO2 which is a suitable material to improve optical and mechanical properties of polymenc products. Plasma enhanced chemical vapor deposition (PECVD) using organosilicon reactants is one of the most promising technique for lowering process temperature, so that it has been extensively studied1-12. In the present; however, hydrocarbon contaminants and a plenty of Si-OH termination in Si-O-Si networks tend to exist in the films, which degrade mechanical, optical and electrical properties of the films. It is necessary to understand the deposition mechanism at, low temperature in order to solve the problems. We have studied the low-temperature PECVD of Si02 by spectroscopic diagnosing techniques such as optical emission and mass analysis6-7, 11- 12Infrared reflection absorption spectroscopy (IR-RAS) has been a well-established technique for characterization of thin films on metals as· well as on semiconductors and insulators13-17. In this paper, we report on' the surface reaction of room-temperature PECVD of Si02by using in situ IR-RAS."