Thermal Field Design And Optimization Of Directional Solidification For Multicrystalline Silicon Growth

- Organization:
- The Minerals, Metals and Materials Society
- Pages:
- 7
- File Size:
- 454 KB
- Publication Date:
- Jan 1, 2015
Abstract
Cast multicrystalline silicon ingots are widely used in photovoltaic manufacturing. A key issue to achieve high solar cell efficiencies is to attain an optimized temperature field during directional solidification (DS) process. This paper reports numerical investigation of multicrystalline silicon (mc-Si) ingot production using two major types of DS furnace. Specific examination is made on thermal distribution, interface shape and stress field. Evaluation is performed for the applicability of thermal system design to reduce thermal stress, improve crystal quality and enhance energy efficiency. The effects of procedure parameters and geometric configuration on temperature distribution are discussed as well to provide the viable solutions for systems optimization.
Citation
APA:
(2015) Thermal Field Design And Optimization Of Directional Solidification For Multicrystalline Silicon GrowthMLA: Thermal Field Design And Optimization Of Directional Solidification For Multicrystalline Silicon Growth. The Minerals, Metals and Materials Society, 2015.