Thermodynamic Analysis for Crystal Growth of the HI-V Compound

"Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures of arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and. 1336K , These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the. chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by· authors.IntroductionThe group III-V compound semiconductors ate important materials used in optoelectronic liquid high speed electronic device. The crystal growth of the III-V compounds can involve processes that require contact between the solid, liquid and vapour phases at near equilibrium condition. Examples of processes that involve contact between the solid, liquid and vapour phases include bulk crystal growth such as the horizontal Bridgman and the liquid encapsulated Czochralski method and liquid epitaxy, and between the solid and vapor include chemical vapour deposition and molecular beam epitaxy. Therefore, the knowledge of the phase diagram and thermodynamic properties for the III-V binary alloys is essential for the analyses of crystal growth techniques of III-V compounds.For these reasons, a series of different · types calorimetric measurements had been carried out: (1) The heat contents of alloys for the Ga-As, In-As, Ga-P and In-P systems by a drop calorimeter [1;2,3]; (2) the heats of formation of the GaAs, InAs, GaP and InP compounds by a twin solution calorimeter [4]; and (3) the standard entropy of these compounds by an adiabatic calorimeter [5]. Based on the third law method, the Gibbs energies of these compounds were derived from the heat capacity, standard heat of formation and standard entropy data obtained by authors. Integral molar thermodynamic quantities of the liquid III-V .alloys were also determined from combining the heat contents of alloys with standard heat of formation and standard entropy data of the compounds· by applying the thermodynamic analysis method developed by Oelsen [6]. In the present study, the thermodynamic calculations for the crystal growth processes of the III-V compound were carried out using newly experimental data of the phase diagram and thermodynamic .properties measured by authors"