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By Jack G. Crump

Nuclear radiation systems for gauging solids content in process slurries and level in crushers has demonstrated acceptance in ore processing. The use of nuclear radiation for moisture analysis of bulk materials is presently receiving acceptance in beneficiating and agglomerating processes. On the horizon is the use of nuclear activation methods for continuous, qualatative and quantitative analysis of concentrate. The common characteristics of these uses of radiation is the non-contacting nature of the measurement. Unquestionably, this is the dominant reason for acceptance of nuclear methods in level and slurry-gauging. Moisture activation analysis of a product using nuclear methods retain this advantage. However, and: more importantly, they offer new solutions to old problems. The nuclear method in addition to being non-contacting, is non-destructive and provides a continuous measurement of the process variable. The system responds: to the fundamental makeup of matter, mass and elemental composition, not to secondary properties such as temperature, resistivity, or dielectric constant. Measurement is a volume rather than a surface phenomenon, thus the results can provide a truer pricture of the measured variable.

Jan 1, 1965

By Jr. Smith

The equilibrium compositions of product gases for mixtures of air with methane, propane, or ethylene at and around flame temperatures are reported. For each hydrocarbon, compositions are given for five fuel-to-air ratios--two lean, two rich, and one stoichiometric--at five pressures, from 1 to 20 atmospheres, and at an ambient temperature of 25° C.

Jan 1, 1965

By Don M. Jackson, Robert W. Howard

Techniques for the epilaxial growth of single -crystal silicon carbide films on silicon were developed. The vapor-phase decomposition and bydrogen reduction of silicon tetrachloride (SiC14) and Propane (C3H8) resulted in clear films of silicon carbide, lip to seveval microns in thickness. The growth took place in a horizontal . silicon epilaxial reactor at 1100°C (pyrometer) at a rate of- 3000Å per minute. Electron diffraction and X-ray diffraction studies demonstrated that the films were single-cyrstal, ß -phase, or cubic silicon carbide. SiO2 film were used to mask areas of the silicon sur-lace in order that the silicon carbide might be grown in controlled geometries. Both n- and p-type films were grown on p-type silicon waters.. Heavily doped silicon films of the same conductivity type as the silicon carbide films were deposited over the silicon carbide in order to affect better probe contact to the structures. when n-type silicon carbide mesas were grown on p-type silicon substrates the de vollage-current relationships between films and substrates were that of junction diodes. These diodes showed a sensitivity to while light ill that the incident light increased forward- and reverse-satro,ation currents, P-type silicon carbide mesas grown on p-type silicon were ohmic rather than rectifying in their voltage -current relationship. No conclusions could he reached concerning heterojunc-tiou rectification in the structure. SILICON carbide is a semiconductor with many interesting properties. It decomposes at temperatures above 2200°C.1 It occurs in two general crys-tallographic forms—hexagonal (a Sic) and cubic (ß Sic)—with the cubic form having a forbidden-gap energy of 2.32 ev and the hexagonal form (specifically the 6H polytype) a gap energy of 2.86 ev.3 It behaves as an extrinsic semiconductor at temperatures approaching 5003C. It has been shown to have a high resistance to radiation damage4 and p-n junctions formed in Sic have been shown to radiate visible light under forward- or reverse-bias conditions. Epitaxial silicon carbide on silicon carbide has been successfully grown through the use of a variety of techniques, such as gaseous cracking of SiCL4 and CC4, nearly all of which require a deposition temperature above 1500°C.6 This paper will cover very recent work on the gas-phase deposition of highly ordered films of silicon carbide on high-quality silicon single-crystal substrates. The films have been shown to ex- hibit junction-rectification properties when geometrically isolated regions are electrically biased with reference to the silicon substrate. There will be no discussion of the mechanism of heterojunction rectification, but the methods of film fabrication, geometry control, and structural evaluations will be covered in detail. Electron diffraction, X-ray diffraction, and diode electrical properties were used to characterize the films and the junctions. GAS-PHASE DEPOSITION OF Sic The techniques for the deposition of silicon carbide films were a logical outgrowth of the standard silicon epitaxial process. The major premise followed was that, for any film to nucleate in an ordered fashion where there is considerable mismatch in lattice parameters (in this case 22 pct), an extremely clean, damage-free substrate surface must be presented to the gas stream. Thus a standard gas-phase HCl etching step was used to prepare the substrates for growth. A minimum of 5 µ of substrate-surface material was removed prior to the deposition of Sic overgrowth films. The techniques used for growing silicon carbide films were those of growing silicon alone, with the added injection of a hydrocarbon gas into the hydrogen and silicon tetrachloride gas stream. The hydrocarbon gases used thus far have been research-grade (99.99 pct) methane (CH4) and propane (C3H8). Propane ultimately gave the best results. The gas flows were controlled through a panel shown schematically in Fig. 1. A hydrogen main stream of 30 liters per min passed through the horizontal quartz-tube epitaxial reactor, while SiC14, C3H8, HC1, and doping gases were injected as side streams. The

Jan 1, 1965

By J. C. Sarace, S. M. Sze, C. R. Crowell

Thin films of tungsten 077 n-type germanium, silicon, and gallium arsenide were obtained by reacting tungsten hexafluoride with the semiconductor surface in an argom atmosplrere at temperatures between 325° and 400° C. Capacity-voltage, current-iloltage, and photoelectric measurements were used to investigate the characteristics of the tungsten -semiconductor diodes thus Produced. The junctions are shown to he very close to ideal Schottky barlp/ers with barrier heights measured with respect to the Fermi energy of 0.18, 0.65, and 0.78 1.1 jar W-Ge, W-Si, and W-GaAs, respectively. The electrical properties of the W-Si interface show no deterioration when heated to 1000°C in dry forming gas for 5 min. A theoretical value of the Richardson constant, A, appropriate to the semiconductor-hand structure has been used in evaluating the current-voltage characteristics. ThE W-Si surface-barrier diode was initially proposed for investigation because the eutectic temperature with silicon (1400°C) is much higher than that in the Si-Au system 1370°C).1 This would permit more flexibility in heat treatment and possibly provide greater reliability at elevated temperatures. The lower work function of tungsten (4.54 ev)2 compared with that of gold (4.78 ev)3 also suggested that a lower barrier height would be obtained with tungsten and hence a lower forward bias and lower minority carrier injection ratio for a given current density. The investigation was extended to include the characterization of W-Ge md W-GaAs surface-barrier diodes. The tungsten films have been produced by reacting WF6 with germanium, silicon, and GaAs surfaces in an argon atmosphere at temperatures from 300° to 500°C.4 This process is a very satisfactory alternative to the relatively difficult process of evaporating tungsten films in vacuo. To ensure an adequate electrical characterization of the tungsten-semiconductor interface, three types of barrier-height measurements have been performed. The mutually consistent results obtained lead to the conclusion that the tungsten-semiconductor junctions are indeed of the Schottky type. EXPERIMENTAL PROCEDURE The apparatus used for producing tungsten films is shown schematically in Fig. 1. It consists of an argon carrier gas line to which metered amounts of tungsten hexafluoride can be rapidly added. The mixture passes through a heated reaction tube containing the semiconductor slices and is exhausted to a hood. The argon is purified by passage through a 6-in. column of titanium turnings maintained at 800°C. The tungsten hexafluoride dispensing arrangement was designed by V. C. Garbarini and W. R. Bracht.4 A measured amount of liquid tungsten hexafluoride is injected into the argon stream and vaporizes. The mixture passes through a sodium fluoride absorption cell to remove traces of hydrogen fluoride, then into the nickel reaction tube. The tube is 12 in. long with an inside diameter of 1/2 in. The center section is heated by a furnace of the self-supporting wire-filament type. It was chosen for its rapid heatup and cooling. The wall thickness is 10 mils except for a 3-in. hot zone which is 30 mils thick to reduce thermal gradients along the length. The samples to be coated are placed on a sapphire plate and centered in this section. The tungsten is deposited with the following sequential steps: the loaded reaction tube is flushed with argon at a rate of 500 cu cm per min and heated to 370°C. Then 0.45 g of liquid tungsten hexafluoride is injected into the argon stream. The samples are held at this temperature for 2 min. The tube and samples are then cooled to room temperature and the samples removed. Tungsten films were grown on (111) faces of silicon and germanium polished with Linde A abrasive and lightly etched with HF-HNO3. The GaAs surfaces were (100) faces chemically polished with a H2SO4-H2O2 solution. The films have typical sheet resistances of 0.2, 8, and 15 52/0 when grown on germanium, silicon, and GaAs, respectively. After the tungsten deposition, ohmic contacts were alloyed on the back surfaces of the wafers. Ohmic contacts to the germanium and silicon were obtained by alloying Au-Sb at 370°C, ohmic con-

Jan 1, 1965

By L. F. Heising

The Bureau of Mines evaluated 191 composites from the central Mesabi Range, Minn., chiefly by reductive roasting and magnetic separation. After reductive roasting and magnetic separation at minus 325 mesh, 28 composites produced concentrates that contained an average of 66.0 percent iron with less than 10 percent silica. Recovery of contained iron was over 90 percent. Natural magnetic material in excess of 5 percent was present in 142 composites. Trial flotation tests were used to evaluate three samples unresponsive to reductive roasting and magnetic separation procedures, and satisfactory concentrates having low silica contents (averaging 6.6 percent) were achieved.

Jan 1, 1965

By John Knox

The object of this paper is to present an analysis of the major problems encountered both in the design and application of downhole drills. Particular reference is made to design features governed by: physical size limitations; metallurgical material standards; physical operating environment; range of commercial materials to be drilled; high power output required, coupled with simplicity from the operating and maintenance viewpoint; and bit design. The history of attempts to develop downhole drills is discussed, and representative mechanical configurations are illustrated. The general design and application aspects of the different types are commented on. The application of this drill type in various commercial fields, such as (a) oil-well drilling, (b) open-pit mining and (c) underground mining, is discussed, along with the limitations presently imposed by the commercial state of the art in the manufacture of accessory equipment; e.g., drill rods, air compressors, mountings, etc. Suggestions on the possible future direction of the development and application of this tool are put forth.

Jan 1, 1965

By V. C. P. Morfopoulos, N. Arbiter

Theoretical and experimental studies of the interactions of mineral particles with electrical fields of cylindrical symmetry have been made. Theoretically, an expression relating field gradient and intensity to the force experienced by a dielectric particle was derived in a manner paralleling the magnetic analog. Pauthenier's and Cohen's expressions were considered in the evaluation of coulombic forces. Comparison of dielectric and coulombic interactions of minerals exhibiting a wide difference in dielectric susceptibility revealed the potential significance of dielectric forces in a field of appropriate characteristics. Experimentally, apparatus was designed for the study of forces experienced by a single stationary particle in an electrostatic field. This permitted the separate and precise measurement of dielectric interactions in the field. The experimental results were in good agreement with the theory and with relevant published data. Dielectric forces were found of comparable magnitude with coulombic in the presence of an adequate field gradient. Prolonged exposure of minerals to an inhomogeneous field was found to enhance the dielectric response. Dielectric inter- actions properly employed may thus be important in electrostatic concentration techniques. Conventional electrostatic separation techniques employ forces between charged particles and field electrodes to establish the trajectories which effect separation. Uncharged mineral aggregates, although unaffected by homogeneous electrical fields, should respond to fields exhibiting appropriate orientation and electrical gradients. The purpose of this paper is to establish the theoretical and experimental base for the comparison of the forces due to dielectric-field interactions with those of electrostatic origin. Apparatus and techniques developed for the determination of dielectric interactions are described and data on the dielectric forces experienced by stationary particles in cylindrical fields are reported. Finally, a quantitative comparison of dielectric and electrostatic forces is given. THEORY Dielectric Forces: When dielectric particles, minerals for example, are placed in an inhomogeneous field they experience interactions that give rise to substantial dielectric forces.' The latter were shown proportional to the intensity of the field, the potential gradient, the size of the particles and the dielectric permittivity difference between the particles and the medium. The properties of the inhomogeneous field, E, and the magnitude of the gradient, dE/dl, depend on the geometry of the system in question.

Jan 1, 1965

By Fred T. Towne

Recent developments in fine grinding by the means of mechanical impaction are the result of continuing improvements in modern machine construction. This is especially true when related to the bearings and mechanically operated parts of impact mills. These improvements allow manufacturers to increase the speeds of the impacting members Most of the more common forms of size reductions, such as percussion, pressure, friction and sectioning, or cutting were at one time accomplished by human hands. These actions were transferred to machinery. Originally of limited application, their use widened as industrial materials and construction became more sophisticated.

Jan 1, 1965

By William H. Engelleitner

Agglomeration by balling in cylindrical or shallow pan devices dates back to the early part of this century. The first sintering tests conducted by Dwight-Lloyd on nonferrous ores included a mixing step for ore, flux and fuel carried out in a deep pan device similar to the balling pans, or discs, presently in use. Further work directed mainly toward sintering of ferrous and nonferrous ores always included a preparatory step, usually referred to as mixing, agglomerating or green-balling of the ingredients. In the late forties and early fifties two methods of particle preparation prior to firing were in general use. In Europe the balling pan was used predominantly, both as a mixer and as a pelletizer. In the United States many pilot plants and semi¬commercial plants used balling drums. When the first iron ore pelletizing plants were built in this country, the most frequently used device for green-balling was the cylindrical drum. At the same time, the pan device was used both in Europe and the United States for many other materials such as fertilizer, cement, flyash, alumina and copper concentrates, as well as to mix the feed for sinter machines. The difference between these two balling devices - -the drum and the disc - has been the subject of much discussion and is well covered by several papers included in the 1962 publication "Agglomeration' issued by AIMS, based on their 1961 International Symposium held in Philadelphia. (1)

Jan 1, 1965

By C. F. Giermak

Over a considerable period of time great interest has been shown in selective dry concentration of fine ferromagnetic particles, although it is only recently that new permanent magnetic materials have been made available to permit building of such permanent magnetic separators. It is well known that the conventional drum separator does' not efficiently separate fine materials. The centrifugal force on any drum acts in accordance with the particle size and gravity, which may beat varying magnitude-.opposite to the magnetic force, especially when the material is not closely sized. The Magnetic-Mechanical Separator (MMS) is designed for the concentration of fine, unsized magnetic materials where the percentage composition of magnetics to nonmagnetics, or the nature and texture of the materials, is such that its unique agitation and shake-out action with no centrifugal force provides greater efficiency than is obtainable by conventional magnetic separation equipment. This machine consists of a complete double belt conveyor unit with a premagnetizing Axial Pole Agitating Pulley at the feeding end of the lower conveyor belt and a special agitating concentrator magnet above the lower belt of the upper conveyor.

Jan 1, 1965

By James F. Devine

This Bureau of Mines report describes tests conducted at three sites to determine if, and to what extent, a vertical presplit fracture plane placed between a blast point and detection point will reduce vibration levels. Statistical analyses indicate that the presplit fracture plane did not reduce the vibration level.

Jan 1, 1965

By F. V. Lenel, G. S. Ansell, M. J. Salkind

An experiment is described in which the growth of interparticle necks in an array of loose spherical silver powder at temperatures near 300°C was determined by measuring changes in the electrical resistance of the array. The activation energy for neck growth of contacts was derived by abruptly changing temperature and noting the change in the rate of neck growth. Since the experiments were run under an external load, the changes in activation energy with stress could he determined. The activation energy was found to decrease rapidly with increasing stress. It is concluded that the material transport in the experiments is one of plastic flow by dislocation motion. The variation of activation energy with stress is typical for cross slip of dislocations, an important material transport mechanism in the temperature range investigated. THE process in which powder compacts or aggregates of loose powder are held at an elevated temperature under an external load is called hot pressing or sintering under pressure by powder metallurgists. In this investigation the early stages of this process as applied to loose spherical silver- powder aggregates were studied. The powder particles were approximately 100µ in diameter and the temperature was near 300°C, i.e., below one half of the melting point of silver in degrees Kelvin, where volume diffusion is not expected to contribute to sintering. In the process, the contact or neck areas between powder particles grow. Since this involves plastic deformation of the particles under a constant external load (even though not under constant stress) it would be termed creep by mechanical metallurgists. On the other hand, the growth in neck area observed in compacts or loose-powder aggregates held at elevated temperature without the application of an external load is termed sintering by powder metallurgists. During sintering the major driving force is the stress due to surface tension. However, even when no load is placed on the compact or powder aggregate, an external stress, i.e., gravity, plays an important role in sintering in addition to those stresses arising from surface tension, as was shown in two previous investigations.'" It is therefore postulated that no sharp dividing line can be drawn between the phenomena of "creep" and "sintering". Different material transport mechanisms may be involved in either of these phenomena, but they will depend upon the temperature and the level of stress, but not necessarily upon the nature of the driving force: surface tension or external load. At the low temperatures of this investigation, an external stress much higher than the stress due to surface tension is necessary to obtain measurable rates of neck growth. In order to avoid misunderstanding this phenomenon will be called "creep". The rate of growth in contact area in the loose silver-powder aggregates was determined by meas-

Jan 1, 1965

By Helmut Lerchs

An open-pit mining operation can be viewed as a process by which the open surface of a mine is continuously deformed. The planning of a mining program involves the design of the final shape of this open surface. The approach developed in this paper is based on the following assumptions: 1. the type of material its mine value and its extraction cost is given for each point; 2. restrictions on the geometry of the pit are specified (surface boundaries and maximum allowable wall slopes); 3. The objective is to maximize total profit-total mine value of material extracted minus total extraction cost. Two numeric methods are proposed: A simple dynamic programming algorithm for the two-dimensional pit (or a single vertical section of a mine), and. a more elaborate graph algorithm for the general three-dimensional pit. ASURFACE mining program is a complex operation that may extend over many years, and Involve huge capital expenditures and risk. Before undertaking such an operation, it must be known what ore there is to be mined

Jan 1, 1965

By John Brownson

Ge-Si N-N heterodiodes hare been built recently which show promise as high-speed logic devices. Low-resistivity germanium is deposited on silicon substrates held at temperatures above the germanium melting point and an alloyed heterojunction formed. The diodes are fabricated from this material using conventional mesa techniques. Over-all device qualify has been greatly improved by the use of epitaxial silicon substrates, that is, a subsirale consisting of a film of thin, high -resistivity silicon on a thicker Piece of low-resistirily silicon crystal. A semimpirical device design equation has been devised which predicts switching performance fairly well within the range of resistivitics and geometries employed. Switching times 01 0.9 ns and PIV 's of —20 v are typical of the better 10-ma diodes. Switching times as low as 0.5 ns have been observed for 10-ma diodes and as low as 2.8 ns for 200-ma diodes. With further development it should be possible to improve switching speed by a factor of four. IN our laboratory, Ge-Si heterodiodes have been built recently which show promise as high-speed logic devices. The diodes have been built using a process reported in some detail in an earlier publication.' The process in short involves alloying a thin film of low-resistivity germanium into a silicon substrate. the germanium having been transported and deposited by the well-known Theuerer halide reduction process.2 This process contrasts with that reported earlier by Oldham who used an essentially conventional direct epitaxial deposition technique.3 Oldham's process, unlike ours, requires cleavage of the silicon sample inside the reactor furnace the instant prior to deposition. Our process has the advantage of yielding large-area macro-scopically plane heterojunctions. Heterodiodes in general have several interesting properties. Without attempting to summarize the theory of heterojunctions.4 two of these properties which have direct relevance should be mentioned. First, N-.V and P-P heterojunction diodes rectify alternating current. Provided that either the band gap or the electron affinity of the two materials is different (which in general is the case), electronic barriers will exist in the junction band structure. When the device is sufficiently forward-biased, the barriers shift so as to permit current flow, and when it is reverse-biased. the barriers block current flow. Second, for N-N and P-P heterodiodes. the foward-conduction process involves majority carriers only. Consequently. when such a device is turned off. there is no minority-carrier storage and hence the diodes switch on and off quite rapidly. As we have reported earlier. N-P and N-N Ge-Si heterodiodes have been built in this laboratory. As one would predict from theory, the N-P heterodiodes were rather slow in turning off while the N-N's were quite fast. Similarly, the turn-off time of the N-P's increased rapidly with forward current while that of the N-N's was independent of forward current. Both N-N's and N-P's were moderately photosensitive. Photocurrents resulting from normal room illumination were as high as 1 µa at 1 v for small-area devices. The most disappointing parameter of the early N-N devices was reverse leakage.' The reverse characteristic was invariably "soft" and leakage at only several volts reverse bias was intolerable. The reverse characteristic was greatly improved by using higher-resistivity silicon substrates. Leakage becomes large at voltages about one third of the avalanche voltage one would expect of a P-N homo-junction formed on silicon of the same resistivity. Thus leakage could be reduced to reasonable limits by using unconventionally high-resistivity silicon. Medium-power diodes formed on 30 ohm-cm substrates leaked typically 15 to 50 µa at 100 v reverse bias. The use of high-resistivity silicon substrate material, however, created a new problem. In order to have an acceptable forward-conductance characteristic. the area of the diodes had to be increased. With this increase in area, the capacitance increased. Switching time for N-N heterodiodes is essentially a linear function of capacitance. Thus when the resistivity was raised. so was the switching time. A SEMIEMPIRICAL HETERODIODE DESIGN EQUATION As a result of our experiments with a limited range of diode geometries and resistivities. a semi-

Jan 1, 1965

By Foster Fraas

The Bureau of Mines investigated a method for calculating values of adsorption energy; the goal was to devise an equation consistent with experimental data accumulated in the investigation of adsorption as related to ore separation processes. Numerical identification of the constants of a previously formulated equation provided an equation by which values of adsorption energy could be calculated. Values thus calculated checked with those obtained by calorimetric measurement.

Jan 1, 1965

By W. C. Hauber

Techniques previously published to predict the production performance of a water flood when the mobility ratio is not unity have been primarily restricted to a five-spot well pattern. When other types of well patterns are considered, the prediction of performance has required either a model study or a complex numerical solution of a multiple-fluid system with a high-speed digital computer. Simple methods are developed in this report for predicting the areal sweep efficiency and injectivity history of a water flood for arbitrary well patterns and mobility ratios. The effect of an initial gas saturation can be incorporated into this method of prediction. With the layer superposition concepts published by Prats, et al.,1 these methods can be used to predict the production performance of a water flood in a reservoir having a wide range in permeability. A reasonably good agreement is shown by comparisons of the results calculated by this method with those obtained either by model studies or by complex numerical solution of multiple-fluid systems. Therefore, it has been concluded that a reasonably accurate method has been developed for predicting the production performance of a water flood employing an arbitrary type of well pattern for any given mobility ratio. A medium-speed digital computer can be used in applying this method. INTRODUCTION Production performance of multi-fluid five-spot water floods can be predicted by the techniques published by Prats, et al.1 This technique takes into account the effects of initial gas saturation, mobility ratio and vertical variations in horizontal permeability. A basic assumption in applying this technique is that unit displacement efficiency does not vary with time after the passage of the flood front. Prats, et al. demonstrated that this assumption is valid for normal waterflood applications with small mobility ratios. To extend Prats' technique to other types of well patterns has required either an experimental model study or a numerical solution of a multiple-fluid system to describe the performance of an individual homogeneous layer. Sheldon and Dougherty2 presented an exact numerical solution employing any arbitrary well pattern. This technique is complex to apply, requiring (1) numerical solution of the single-fluid system, (2) conformal mapping of the streamlines and iso-potential lines to form a new grid network, and (3) a numerical solution of the multi-fluid system on the new grid network. A method was developed in this paper to approximate areal sweep efficiency and injectivity as functions of time for an individual homogeneous layer for arbitrary well patterns and mobility ratios. Analytic expressions were derived to directly apply this method to five-spot and direct line drive well patterns. For other types of well patterns, this method is similar to the approach of Higgids and Leighton,6 in that it utilizes the stream tubes and iso-potential lines obtained by the solution of differential equations when the mobility ratio is unity. However, this method is easier to apply than the Higgins-Leighton method since it does not require knowledge of the variation between oil and water relative permeabilities and saturation. Using the relationship between areal sweep efficiency, injectivity and the volume of water injected into an individual homogeneous layer as obtained by the method presented in this paper, and Prats' technique for the superposition of individual layers, one can predict the production performance of any water flood. ASSUMPTIONS GENERAL Basic assumptions made in this report are that fluids are incompressible and the layers are horizontal, homogeneous and uniformly thick. It is assumed that as water is injected into the layer, three distinct regions are formed —a water bank, an oil bank, and an unflooded region. Each region is assumed to displace other regions in a pis-tonlike manner, with only one fluid flowing in each region, so that there is no change in unit displacement efficiency with time after the flood front has passed in the reservoir. Therefore, the residual oil saturation in the water bank and the oil saturations in the unflooded region are constant throughout the layer. The ratio (F) of the bulk volume of a layer occupied by the oil and water banks at any time before oil breakthrough, to the corresponding bulk volume of a layer occupied by the water bank, is given' by the equation BREAKTHROUGH AREAL SWEEP EFFICIENCY To predict the behavior of any type of waterflood pattern, one must know the breakthrough areal sweep efficiency Eb(Mc,o, F) for the pattern for any water:oil mo-

Jan 1, 1965

By F. L. Pierson

Since the discovery of 'potash in the Carlsbad area in 1926 and the start of mining operations in 1931, "first mining," operations have been carried on. This is a room and pillar system in which approximately 62% of the total ore is removed. Or the basis of ore reserves and rates of extraction, the life of the mine in the early; days was estimated to be well over 50 years, however, even with an increase by additional ore reserves, it became increasingly apparent that the life of the mine was being shortened considerably by increased production. Further cause for the shortening of mine life was due to the exceptionally weak back over the northeast quadrant of the main orebody which had .caved in on first mining up to a height of 8 feet. Thus, in 1953 the decision was' made to begin pillar pulling, also called, second mining or final mining, and in December of 1953 this program was started after much discussion.

Jan 1, 1965

By S. R. Goodman, Hsun Hu

A study has hem made of the formation of annealing textures in an 18-8 austenitic stainless steel (Type 304L) from various deformation textures obtained by rolling at different temperatures. When the deformation texture is a mixture of the ferritic type and the brass type owing to the pres -ence of both martensitic ferrite and retained aus-tenite in the specimen, recrystallization takes place by the growth of the existing austenite phase. In a previous report,' it was shown that the rolling texture of austenitic stainless steel (Type 304L) changed gradually from the brass type to the copper type with increasing temperature of deformation above 200°C. These changes are similar to those in high-purity silver2,3 and electrolytic copper;4 a brass-type texture is favored at low rolling temperatures, whereas a copper-type texture is favored During the course of rolling -texture transition from the brass type to the copper type, the subsequent recrystallization textures change accordingly. The orientation relationship between the annealing textures and the various rolling textures, being consistent with previous observations on various fcc metals, can be described as [Ill] rotations of approximately 25 to 40 deg. Carhide precipitation may influence the annealing textures. at high rolling temperatures. Furthermore, the annealing textures in high-purity silver5 and electrolytic copper4 were found to depend entirely on the prior deformation texture. From a copper-type rolling texture a strong cube texture will form upon recrystallization, whereas from a brass-type rolling texture the annealing texture will be quite different from the cube orientation. In an earlier comm~nication,6 the formation of a strong cube texture in 18-8 austenite stainless steels (Types 304 and 304L) was reported briefly by the authors. The present paper constitutes the results of a complete study of the annealing textures obtained from a

Jan 1, 1965

By W. R. Huff

Yield stress and plastic viscosity values, determined from shear rate-shear stress relationships, were found to be a linear function of coal concentration for coal-water slurries containing 40, 45, 50, and 55 weight-percent of powdered coal. In the laminar region, the flow is described by an equation derived from the fact that the square root of the shear stress varied linearily with the square root of the shear rate. In the turbulent region, the friction factor was found to be inversely proportional to the velocity to the 0.12 power.

Jan 1, 1965

By Thon T. Gin

The lithologic, mineralogic, and magnetic beneficiation characteristics of the iron formation at U. S. Steel's Atlantic City Ore Mine, Fremont County, Wyoming, have been determined. The iron formation averages about 30 percent Fe content, and varies from 125 feet to about 500 feet in thickness. It is composed of interbedded magnetite-rich quartzites, magnetite-quartz-amphibole schists, and amphibole-chlorite schists. Quartz, actinolite-tremolite, chlorite, and magnetite are the essential mineral constituents. These rocks are differentiated into four major ore types on the basis of their relative quartz and amphibole content. The iron content of the magnetic concentrate decreases and the silica content increases with decreasing grain size and increasing amphibole content in each ore type at the same fineness of grind. Criteria were developed to enable the mine operator to recognize the ore types and to blend them to produce a more uniform concentrator feed. This results in less variation in product quality and requires fewer changes in operating conditions-in the concentrator.

Jan 1, 1965