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By John Convey

This paper, a follow-up to an earlier study, gives the history of Canadian developments in mineral processing from 1921 to the fall of 1964. It deals extensively with comminution and flotation, and then goes on to cover the fields of gravity concentration, magnetic concentration, cyanidation, the processing of uranium ores, and instrumentation. Several outstanding examples of installations are given. The paper concludes with a discussion of present-day trends in mineral processing. Introduction T HE history of the developments in mineral processing in Canada from its earliest times to 1920 has already been published by one of the authors (1). The present paper is thus a logical follow-up to bring this history to date. From 1834 to 1920, mineral processing in Canada, as elsewhere in the world, was in its formative stage. This, however, prepared the ground for developments that have resulted in a mining empire from the Atlantic to the Pacific, a mining empire which could be said to be almost on par with that in the United States.

Jan 1, 1965

By Waugh D. M

investigations have been undertaken into the flow characteristics of mineral slurries from a number of Australian metallurgical plants including Mount Isa Mines Ltd., North Broken Hill Ltd., and Broken Hill South Ltd. Experimental equipment installed for this work included facilities for continuous recording of flow rate and pressure drop and detection of sedimentation.Although the method has subsequently been described in published literature, it is believed that the investigations included the original application of a method for correlation of the flow rate and pressure drop data. This method depends on solving by graphical methods the values of the constants k, and c in the relationship EQUATION 1 where D is pipe diameter; ?P, pressure drop; L, length; and V, mean linear velocity. Discussion of this correlation also reveals why sedimentation velocity does not necessarily vary greatly with pipe diameter.INTRODUCTIONIn order to design pumps and pipeline installations for a Newtonian fluid, measurements of the fluid's density and viscosity in any of a number of instruments are sufficient. Substitution of these values in well known equations to calculate Reynolds numbers and subsequent correlation to determine friction factors are all that is required for engineering specification.As a result of work during the last decade, particularly that of Metzner and Reed (1955) and Dodge and Metzner (1959), it is now possible to design for homogeneous non-Newtonian fluids using relatively simple instrumental measurements.These methods can sometimes be applied to thick slurries which behave as if homogeneous. However, for the...

Jan 1, 1965

By Jack G. Crump

Nuclear radiation systems for gauging solids content in process slurries and level in crushers has demonstrated acceptance in ore processing. The use of nuclear radiation for moisture analysis of bulk materials is presently receiving acceptance in beneficiating and agglomerating processes. On the horizon is the use of nuclear activation methods for continuous, qualatative and quantitative analysis of concentrate. The common characteristics of these uses of radiation is the non-contacting nature of the measurement. Unquestionably, this is the dominant reason for acceptance of nuclear methods in level and slurry-gauging. Moisture activation analysis of a product using nuclear methods retain this advantage. However, and: more importantly, they offer new solutions to old problems. The nuclear method in addition to being non-contacting, is non-destructive and provides a continuous measurement of the process variable. The system responds: to the fundamental makeup of matter, mass and elemental composition, not to secondary properties such as temperature, resistivity, or dielectric constant. Measurement is a volume rather than a surface phenomenon, thus the results can provide a truer pricture of the measured variable.

Jan 1, 1965

By Jr. Smith

The equilibrium compositions of product gases for mixtures of air with methane, propane, or ethylene at and around flame temperatures are reported. For each hydrocarbon, compositions are given for five fuel-to-air ratios--two lean, two rich, and one stoichiometric--at five pressures, from 1 to 20 atmospheres, and at an ambient temperature of 25° C.

Jan 1, 1965

By J. O. Brittain, N. R. Adsit

A number of zinc bicrystal specimens with the grain boundary loaded in simple shear were plustically deformed in creep in a vacuum at 200°C and under an argon atmosphere at 350°C. The results indicated that the amount of grain boundary sliding at a given time was controlled by the slip in the grains and was proportional to the resolved shear stress on the slip plane. Curves of grain boundary sliding vs time were found to be cyclic with no regular periodicity. ALTHOUGH grain boundary sliding (G.B.S.) has been investigated in a number of different types of tests on various materials there is substantial disagreement on the interpretation of the various observations. Gifkins1 has presented a comprehensive review of the subject of G.B.S. and fracture. He reports that the activation energy for high-temperature creep is equal to that for volume self-diffusion and that pure metals show less tendency towards intercrystalline fracture than alloys. Pure metals show appreciably greater grain boundary migration than alloys, and both grain boundary migration and grain boundary sliding follow the same general trend in time as plastic deformation during creep.' While there have been a number of different mechanisms proposed to account for G.B.S., none of the models explains all the results. Since zinc has only one prominent slip system, it was hoped that experiments on G.B.S. in zinc bicrystals might enable us to separate the effect of grain boundary angle and the effect of matrix slip and thereby resolve at least one part of this complex phenomenon. EXPERIMENTAL PROCEDURE Bicrystals of pure zinc (99.99 pct) were grown by a Bridgeman technique in a furnace having a gradient of 20°C per in. The bicrystals were seeded to a desired orientation and grown in a split graphite mold which was 3/4 by 5/8 by 8 in. The mold was enclosed in a Pyrex tube and the tube was evacuated and then filled with a small amount of argon before it was placed in the furnace. The growth rates were 1/2 to I in. per hr for the bicrystals and 1/2 to 3 in. per hr for the single-crystal seeds. The longitudinal V notches served to hold the grain boundary in position during the growth process. A schematic rep- resentation of a specimen which had been cut with a jewelers saw from the bicrystals is shown in Fig. 1. All specimens of a series were cut from the same crystal, some of which were 7 in. in length. After specimen preparation the boundary was approximately 5/16 in. long and the V notches had a radius of 1/16 in. The boundaries were straight at a magnification of X100 with the exception of a few which had a gradual radius of curvature of greater than 3.2 in.-1. Laue back-reflection photograms were taken on the specimens to check the orientation of grains in the bicrystals. The method of relating the orientation of the two lattices is shown in Fig. 1, where 0 is the angle between normal to the boundary and the trace of the basal plane, is the angle in the boundary between the trace of the basal plane and a line parallel to the V notch, and x is the angle in the basal plane between the Burgers vector and the perpendicular to the grain boundary. After mechanical polishing the specimens were chemically polished.2 Subsequent to the polishing operation the specimens were encapsuled under a vacuum of better than 25 annealed at 340°C for 1 hr to remove the effects of this handling, and again chemically polished. Finally, fiduciary marks were scribed on the specimen using a micromanipulator. Creep tests, which were conducted in a modified Bausch apparatusS with the boundary loaded in simple shear, were run at a constant load (since the boundary area remained essentially constant this is approximately constant grain boundary stress). The temperature was controlled to ±1/4°C as measured on a semiprecision potentiometer with a calibrated thermocouple. The specimens were tested in a vacuum of better than 0.5 at 200°C and in purified argon at a pressure of 1/2 atm at 350°C. The op-

Jan 1, 1965

By Don M. Jackson, Robert W. Howard

Techniques for the epilaxial growth of single -crystal silicon carbide films on silicon were developed. The vapor-phase decomposition and bydrogen reduction of silicon tetrachloride (SiC14) and Propane (C3H8) resulted in clear films of silicon carbide, lip to seveval microns in thickness. The growth took place in a horizontal . silicon epilaxial reactor at 1100°C (pyrometer) at a rate of- 3000Å per minute. Electron diffraction and X-ray diffraction studies demonstrated that the films were single-cyrstal, ß -phase, or cubic silicon carbide. SiO2 film were used to mask areas of the silicon sur-lace in order that the silicon carbide might be grown in controlled geometries. Both n- and p-type films were grown on p-type silicon waters.. Heavily doped silicon films of the same conductivity type as the silicon carbide films were deposited over the silicon carbide in order to affect better probe contact to the structures. when n-type silicon carbide mesas were grown on p-type silicon substrates the de vollage-current relationships between films and substrates were that of junction diodes. These diodes showed a sensitivity to while light ill that the incident light increased forward- and reverse-satro,ation currents, P-type silicon carbide mesas grown on p-type silicon were ohmic rather than rectifying in their voltage -current relationship. No conclusions could he reached concerning heterojunc-tiou rectification in the structure. SILICON carbide is a semiconductor with many interesting properties. It decomposes at temperatures above 2200°C.1 It occurs in two general crys-tallographic forms—hexagonal (a Sic) and cubic (ß Sic)—with the cubic form having a forbidden-gap energy of 2.32 ev and the hexagonal form (specifically the 6H polytype) a gap energy of 2.86 ev.3 It behaves as an extrinsic semiconductor at temperatures approaching 5003C. It has been shown to have a high resistance to radiation damage4 and p-n junctions formed in Sic have been shown to radiate visible light under forward- or reverse-bias conditions. Epitaxial silicon carbide on silicon carbide has been successfully grown through the use of a variety of techniques, such as gaseous cracking of SiCL4 and CC4, nearly all of which require a deposition temperature above 1500°C.6 This paper will cover very recent work on the gas-phase deposition of highly ordered films of silicon carbide on high-quality silicon single-crystal substrates. The films have been shown to ex- hibit junction-rectification properties when geometrically isolated regions are electrically biased with reference to the silicon substrate. There will be no discussion of the mechanism of heterojunction rectification, but the methods of film fabrication, geometry control, and structural evaluations will be covered in detail. Electron diffraction, X-ray diffraction, and diode electrical properties were used to characterize the films and the junctions. GAS-PHASE DEPOSITION OF Sic The techniques for the deposition of silicon carbide films were a logical outgrowth of the standard silicon epitaxial process. The major premise followed was that, for any film to nucleate in an ordered fashion where there is considerable mismatch in lattice parameters (in this case 22 pct), an extremely clean, damage-free substrate surface must be presented to the gas stream. Thus a standard gas-phase HCl etching step was used to prepare the substrates for growth. A minimum of 5 µ of substrate-surface material was removed prior to the deposition of Sic overgrowth films. The techniques used for growing silicon carbide films were those of growing silicon alone, with the added injection of a hydrocarbon gas into the hydrogen and silicon tetrachloride gas stream. The hydrocarbon gases used thus far have been research-grade (99.99 pct) methane (CH4) and propane (C3H8). Propane ultimately gave the best results. The gas flows were controlled through a panel shown schematically in Fig. 1. A hydrogen main stream of 30 liters per min passed through the horizontal quartz-tube epitaxial reactor, while SiC14, C3H8, HC1, and doping gases were injected as side streams. The

Jan 1, 1965

By J. C. Sarace, S. M. Sze, C. R. Crowell

Thin films of tungsten 077 n-type germanium, silicon, and gallium arsenide were obtained by reacting tungsten hexafluoride with the semiconductor surface in an argom atmosplrere at temperatures between 325° and 400° C. Capacity-voltage, current-iloltage, and photoelectric measurements were used to investigate the characteristics of the tungsten -semiconductor diodes thus Produced. The junctions are shown to he very close to ideal Schottky barlp/ers with barrier heights measured with respect to the Fermi energy of 0.18, 0.65, and 0.78 1.1 jar W-Ge, W-Si, and W-GaAs, respectively. The electrical properties of the W-Si interface show no deterioration when heated to 1000°C in dry forming gas for 5 min. A theoretical value of the Richardson constant, A, appropriate to the semiconductor-hand structure has been used in evaluating the current-voltage characteristics. ThE W-Si surface-barrier diode was initially proposed for investigation because the eutectic temperature with silicon (1400°C) is much higher than that in the Si-Au system 1370°C).1 This would permit more flexibility in heat treatment and possibly provide greater reliability at elevated temperatures. The lower work function of tungsten (4.54 ev)2 compared with that of gold (4.78 ev)3 also suggested that a lower barrier height would be obtained with tungsten and hence a lower forward bias and lower minority carrier injection ratio for a given current density. The investigation was extended to include the characterization of W-Ge md W-GaAs surface-barrier diodes. The tungsten films have been produced by reacting WF6 with germanium, silicon, and GaAs surfaces in an argon atmosphere at temperatures from 300° to 500°C.4 This process is a very satisfactory alternative to the relatively difficult process of evaporating tungsten films in vacuo. To ensure an adequate electrical characterization of the tungsten-semiconductor interface, three types of barrier-height measurements have been performed. The mutually consistent results obtained lead to the conclusion that the tungsten-semiconductor junctions are indeed of the Schottky type. EXPERIMENTAL PROCEDURE The apparatus used for producing tungsten films is shown schematically in Fig. 1. It consists of an argon carrier gas line to which metered amounts of tungsten hexafluoride can be rapidly added. The mixture passes through a heated reaction tube containing the semiconductor slices and is exhausted to a hood. The argon is purified by passage through a 6-in. column of titanium turnings maintained at 800°C. The tungsten hexafluoride dispensing arrangement was designed by V. C. Garbarini and W. R. Bracht.4 A measured amount of liquid tungsten hexafluoride is injected into the argon stream and vaporizes. The mixture passes through a sodium fluoride absorption cell to remove traces of hydrogen fluoride, then into the nickel reaction tube. The tube is 12 in. long with an inside diameter of 1/2 in. The center section is heated by a furnace of the self-supporting wire-filament type. It was chosen for its rapid heatup and cooling. The wall thickness is 10 mils except for a 3-in. hot zone which is 30 mils thick to reduce thermal gradients along the length. The samples to be coated are placed on a sapphire plate and centered in this section. The tungsten is deposited with the following sequential steps: the loaded reaction tube is flushed with argon at a rate of 500 cu cm per min and heated to 370°C. Then 0.45 g of liquid tungsten hexafluoride is injected into the argon stream. The samples are held at this temperature for 2 min. The tube and samples are then cooled to room temperature and the samples removed. Tungsten films were grown on (111) faces of silicon and germanium polished with Linde A abrasive and lightly etched with HF-HNO3. The GaAs surfaces were (100) faces chemically polished with a H2SO4-H2O2 solution. The films have typical sheet resistances of 0.2, 8, and 15 52/0 when grown on germanium, silicon, and GaAs, respectively. After the tungsten deposition, ohmic contacts were alloyed on the back surfaces of the wafers. Ohmic contacts to the germanium and silicon were obtained by alloying Au-Sb at 370°C, ohmic con-

Jan 1, 1965

By Arnulf Muan, Klaus Schwerdtfeger

Activity-composition relations in Pt-Cr and Pd-Cr alloys of low chromium concentrations UCr < 0.3) have been determined in order to ascertain quantitatively the extent of reactions to be expected between Cr2O3-containing oxide phases and platinum or palladium crucibles used as containers in studies of oxide equilibria at low oxygen pressures. This work is a continuation of similar work previously

Jan 1, 1965

By W C. Shakespeare

The Ontario Committee on Taxation is making a comprehensive study of taxation in the Province of Ontario, and in this connection has received representations concerning mining taxation from a number of interested parties. Some of the more important recommendations on mining taxation are reviewed in this article. Introduction FOLLOWING the appointment of the Federal Royal Commission on Taxation, the Ontario Government, effective in November, 1962, appointed the Ontario Committee on Taxation to review taxes and revenues available to the Province of Ontario and its local governments, to co-operate with the Royal Commission on Taxation and with any other bodies of enquiry appointed by other provincial governments, and to make such recommendations as it sees fit to the Prime Minister of Ontario and the Executive Council. The members of the Committee are: MR. L. J. SMITH, F.C.A., Toronto, (Chairman) MR. ERIC HARDY, Toronto DR. R. CRAIG MCIVOR, F.R.S.C., Hamilton MR. CARL A. POLLOCK, Kitchener MR. R. BREDIN STAPELLS, Q.C., and Toronto. Like its Federal counterpart, the Royal Commission on Taxation, the Ontario Committee has held public hearings, has received written

Jan 1, 1965

By L. F. Heising

The Bureau of Mines evaluated 191 composites from the central Mesabi Range, Minn., chiefly by reductive roasting and magnetic separation. After reductive roasting and magnetic separation at minus 325 mesh, 28 composites produced concentrates that contained an average of 66.0 percent iron with less than 10 percent silica. Recovery of contained iron was over 90 percent. Natural magnetic material in excess of 5 percent was present in 142 composites. Trial flotation tests were used to evaluate three samples unresponsive to reductive roasting and magnetic separation procedures, and satisfactory concentrates having low silica contents (averaging 6.6 percent) were achieved.

Jan 1, 1965

By John Knox

The object of this paper is to present an analysis of the major problems encountered both in the design and application of downhole drills. Particular reference is made to design features governed by: physical size limitations; metallurgical material standards; physical operating environment; range of commercial materials to be drilled; high power output required, coupled with simplicity from the operating and maintenance viewpoint; and bit design. The history of attempts to develop downhole drills is discussed, and representative mechanical configurations are illustrated. The general design and application aspects of the different types are commented on. The application of this drill type in various commercial fields, such as (a) oil-well drilling, (b) open-pit mining and (c) underground mining, is discussed, along with the limitations presently imposed by the commercial state of the art in the manufacture of accessory equipment; e.g., drill rods, air compressors, mountings, etc. Suggestions on the possible future direction of the development and application of this tool are put forth.

Jan 1, 1965

By N. A. D. Parlee, E. M. Sacris

OVER 55 years ago, Sieverts and Hagenacker1 and Donnan and shaw2 made determinations of the solubility of oxygen in liquid silver, over a rather short range of temperatures (973° to 1125°C), using quartz bulbs, mainly at 1 atm. From the results of their investigations, Mizikar, Grace, and parlee3 plotted % O vs 1/T and obtained the following straight-line equation for solubility at 1 atm: log % O = 723.7/T - 1.0949 Recent work on the kinetics of the Ag-O2 system394 indicated there might have been some error due to reaction with the direct heated silica bulbs. Thus it became important to redetermine the solubility with the silver contained in a better refractory such as alumina, and by induction heating where the walls of the container were not so strongly heated. It was also desirable to extend the temperature range. A modified Sieverts apparatus of fairly standard type was used except that a special type of reaction tube was employed, Fig. 1. Dried argon with a guaranteed purity of 99.9 pet, and dried medical-grade oxygen with a guaranteed purity of 99.6 pet containing a little nitrogen, were the gases used. The measuring system consisted essentially of a manometer and a water-jacketed 100-cc gas buret with an open-end vertical tube parallel to the buret. This tube has the same diameter as the buret in order to give the same capillary effect on the mercury. A screw leveling device was used with the buret leveling bulb to help provide accurate pressure readings. A 2-mm ID capillary line connected the buret to the reaction chamber, helping to reduce the dead volume, which was determined with argon. The heating medium was a 2.5-kw output induction furnace. The induction coil was made of a 3/16-in. copper tubing with eight turns and an inside diameter of 4 cm. The reaction bulb was made of a quartz tube 18 cm long and 3 cm in inside diameter, Fig. 1. Inside the quartz tube were two alumina crucibles (Mor-ganite Triangle RR, XN10 and XN5) one inside the other. Below these two was an alumina disk. The disk prevented the corners of the outer crucible from expanding against the quartz tube. The solid sample (99.994 + pet Ag), which had been previously cleaned by air oxidation and repeated removal of scum, was placed inside the inner crucible. An alumina disk with a hole at the center covered the two crucibles. In order to decrease the dead volume, an evacuated quartz "filler" tube was placed on top of the crucible cover. The part of the reaction tube above the spherical joint was made up of Pyrex glass with a flat glass top. It was here that a prism was placed to facilitate the use of an optical pyrometer, previously calibrated at the freezing point of silver. This type of reaction bulb and furnace assembly was specially designed for this work, and used in preference to the relatively new water-

Jan 1, 1965

By Hillary W. St. Clair

An equation is derived for the rote of reaction of a sphere of metal oxide in a restricted enclosure through which a reducing gas is flowing. The equation takes into consideration the reaction rate coefficient, transport through the gas and through the porous shell of reduced oxide, the rate of gas flow, THIS paper describes a mathematical study of the chemical and physical processes that determine the rate of reduction of solid metal oxide with a reducing gas. The study was a part of a theoretical study leading to the development of a mathematical model for the simulation of the thermochemical behavior of the iron blast furnace. An essential feature of such and the volume of- space surrounding the sphere available for gas flow. The equation is applied to experimental data on vote of reduction of iron oxide in hydrogen. The equation serves as a model for predicting the course of reduction of a particle of. metal oxide in a shaft furnace. a model is an adequate mathematical relationship defining the rate of reaction in terms of all the important chemical and physical phenomena that affect the rate of reaction. This includes not only the reaction rate coefficients, equilibrium ratios, gas composition, and temperature, but also the relevant physical properties of the oxide, rate of gas flow, and relative volumes occupied by gas and solid. In many previous experimental studies of the rate of reduction of oxides by hydrogen or carbon monoxide, the rate of reduction was assumed to be controlled primarily by the chemical reaction at the

Jan 1, 1965

By V. C. P. Morfopoulos, N. Arbiter

Theoretical and experimental studies of the interactions of mineral particles with electrical fields of cylindrical symmetry have been made. Theoretically, an expression relating field gradient and intensity to the force experienced by a dielectric particle was derived in a manner paralleling the magnetic analog. Pauthenier&apos;s and Cohen&apos;s expressions were considered in the evaluation of coulombic forces. Comparison of dielectric and coulombic interactions of minerals exhibiting a wide difference in dielectric susceptibility revealed the potential significance of dielectric forces in a field of appropriate characteristics. Experimentally, apparatus was designed for the study of forces experienced by a single stationary particle in an electrostatic field. This permitted the separate and precise measurement of dielectric interactions in the field. The experimental results were in good agreement with the theory and with relevant published data. Dielectric forces were found of comparable magnitude with coulombic in the presence of an adequate field gradient. Prolonged exposure of minerals to an inhomogeneous field was found to enhance the dielectric response. Dielectric inter- actions properly employed may thus be important in electrostatic concentration techniques. Conventional electrostatic separation techniques employ forces between charged particles and field electrodes to establish the trajectories which effect separation. Uncharged mineral aggregates, although unaffected by homogeneous electrical fields, should respond to fields exhibiting appropriate orientation and electrical gradients. The purpose of this paper is to establish the theoretical and experimental base for the comparison of the forces due to dielectric-field interactions with those of electrostatic origin. Apparatus and techniques developed for the determination of dielectric interactions are described and data on the dielectric forces experienced by stationary particles in cylindrical fields are reported. Finally, a quantitative comparison of dielectric and electrostatic forces is given. THEORY Dielectric Forces: When dielectric particles, minerals for example, are placed in an inhomogeneous field they experience interactions that give rise to substantial dielectric forces.&apos; The latter were shown proportional to the intensity of the field, the potential gradient, the size of the particles and the dielectric permittivity difference between the particles and the medium. The properties of the inhomogeneous field, E, and the magnitude of the gradient, dE/dl, depend on the geometry of the system in question.

Jan 1, 1965

By John F. Lundeberg

CLAUSS1 observed that if isothermal creep data could be approximated as straight lines on a log stress-log time plot, a relationship existed that could be expressed as log t = m log s + b [ l] where t = time,

Jan 1, 1965

By R. V. Sara

Determination of the Hf-C phase diagram was conducted primarily by metallographic and X-ray diffraction studies on appropriate alloys. The only intermediate phase observed in this binary system was HfC. This phase was found to be homogeneous between 34.0 and 48.0 at. pct C at 2200°c and between 36.0 and 49.3 at. pct C at 3150°C. The lattice-parameter variation was also determined for HfCI-, compositions prepared at 2200° and 3150°C. The most most refractory composition, with a melting point of 3830°c, was established at 47.5 at. pct C from melting-point data. Solidus temperatures of 2240&apos; and 3150°C occur on the high-kafnium and high-carbon sides of the monocarbide, respectively. The invariant point between HfC and carbon is located at 66.0 at. pct C, whereas the 2240°C solidus corresponds to the peritectic temperature at which hafnium is formed from HfC and hafnium-rick liquid. Hafnium has a melting temperature of 2208°C and is capable of taking carbon into solution to the extent of 10.5 at. pct at this temperature. ALTHOUGH the Hf-C phase diagram has not been previously evaluated experimentally in its entirety, the belief has been that the general configuration would resemble the chemically similar Group rV carbide systems, Ti-C and Zr-c.&apos; These binaries are characterized by a single carbide phase with a simple NaC1-type structure which is maintained over wide compositional ranges. This family of carbides has high thermal stability that increases substantially as the atomic number of the metal component increases. This trend characterizes HfC as one of the highest melting materials. According to Agte and Alterthum,2 the melting point for this monocarbide is 3890°C, a value that has been quoted quite extensively for the past several decades. Recently, in repeating the work of Agte and Alter-thum, Adams and Beall3 determined the melting point of HfC to be 3895°C. A significant departure from the commonly accepted version of the Hf-C system was reported by Avarbe and his coworkers,4 who proposed that there is an extreme stabilization of a hafnium in a narrow field to 2820°C, above which it melts peritectically to form HfC and liquid. Their study was also concerned with the melting temperature of various HfCI-, compositions, but the peak melting point was taken from the work of Agte and Alterthum. Avarbe and his associates were not concerned with the high-carbon region of the system. However, three widely varying temperatures have been reported for the HfC-C solidus by other investigators. Cotter and Kohn5 observed approximately 2800°C; Portnoy et al.&apos; reported 3260°C; and, more recently, Krikorian7 indicated 2915°C. Equally as uncertain is the solidus between hafnium and HfC. As noted above, Avarbe et al. report a peritectic temperature of 2820°C, Krikorian7 measured 2150°C, and Benesovsky and Rudy&apos; estimated 2000°C on their diagram. I) EXPERIMENTAL PROCEDURE The starting materials for this study consisted of reactor-grade hafnium hydride obtained from Fair-mount Chemical Co., Newark, N.J., hafnium carbide supplied by Wah Chang Corp., Albany, Ore., and Union Carbide spectroscopic-grade graphite, SP-1. The graphite analysis indicated impurities at levels of only 0.5 ppm or less. According to the suppliers, the hydride and carbide contained the typical impurities listed in Table I. The samples required for these studies were prepared by dry blending either graphite and hafnium hydride or hafnium hydride and hafnium carbide powders for approximately 5 min in a "Spex Mixer Mill". The latter combination was used only for preparing several samples in the HfC1-, melting-point studies. Small pellets, varying between 3/16

Jan 1, 1965

By Edna A. Dancy

Jan 1, 1965

By Fred T. Towne

Recent developments in fine grinding by the means of mechanical impaction are the result of continuing improvements in modern machine construction. This is especially true when related to the bearings and mechanically operated parts of impact mills. These improvements allow manufacturers to increase the speeds of the impacting members Most of the more common forms of size reductions, such as percussion, pressure, friction and sectioning, or cutting were at one time accomplished by human hands. These actions were transferred to machinery. Originally of limited application, their use widened as industrial materials and construction became more sophisticated.

Jan 1, 1965

By William H. Engelleitner

Agglomeration by balling in cylindrical or shallow pan devices dates back to the early part of this century. The first sintering tests conducted by Dwight-Lloyd on nonferrous ores included a mixing step for ore, flux and fuel carried out in a deep pan device similar to the balling pans, or discs, presently in use. Further work directed mainly toward sintering of ferrous and nonferrous ores always included a preparatory step, usually referred to as mixing, agglomerating or green-balling of the ingredients. In the late forties and early fifties two methods of particle preparation prior to firing were in general use. In Europe the balling pan was used predominantly, both as a mixer and as a pelletizer. In the United States many pilot plants and semi¬commercial plants used balling drums. When the first iron ore pelletizing plants were built in this country, the most frequently used device for green-balling was the cylindrical drum. At the same time, the pan device was used both in Europe and the United States for many other materials such as fertilizer, cement, flyash, alumina and copper concentrates, as well as to mix the feed for sinter machines. The difference between these two balling devices - -the drum and the disc - has been the subject of much discussion and is well covered by several papers included in the 1962 publication "Agglomeration&apos; issued by AIMS, based on their 1961 International Symposium held in Philadelphia. (1)

Jan 1, 1965

By C. F. Giermak

Over a considerable period of time great interest has been shown in selective dry concentration of fine ferromagnetic particles, although it is only recently that new permanent magnetic materials have been made available to permit building of such permanent magnetic separators. It is well known that the conventional drum separator does&apos; not efficiently separate fine materials. The centrifugal force on any drum acts in accordance with the particle size and gravity, which may beat varying magnitude-.opposite to the magnetic force, especially when the material is not closely sized. The Magnetic-Mechanical Separator (MMS) is designed for the concentration of fine, unsized magnetic materials where the percentage composition of magnetics to nonmagnetics, or the nature and texture of the materials, is such that its unique agitation and shake-out action with no centrifugal force provides greater efficiency than is obtainable by conventional magnetic separation equipment. This machine consists of a complete double belt conveyor unit with a premagnetizing Axial Pole Agitating Pulley at the feeding end of the lower conveyor belt and a special agitating concentrator magnet above the lower belt of the upper conveyor.

Jan 1, 1965